Print Email Facebook Twitter Wafer-scale low-disorder 2DEG in 28Si/SiGe without an epitaxial Si cap Title Wafer-scale low-disorder 2DEG in 28Si/SiGe without an epitaxial Si cap Author Degli Esposti, D. (TU Delft QCD/Scappucci Lab; TU Delft QuTech Advanced Research Centre; Kavli institute of nanoscience Delft) Paquelet Wuetz, B. (TU Delft QCD/Scappucci Lab; TU Delft QuTech Advanced Research Centre; Kavli institute of nanoscience Delft) Fezzi, V. (TU Delft QCD/Scappucci Lab; TU Delft QuTech Advanced Research Centre; Kavli institute of nanoscience Delft) Lodari, M. (TU Delft QCD/Scappucci Lab; TU Delft QuTech Advanced Research Centre; Kavli institute of nanoscience Delft) Sammak, A. (TU Delft BUS/TNO STAFF; TU Delft QuTech Advanced Research Centre) Scappucci, G. (TU Delft QCD/Scappucci Lab; TU Delft QuTech Advanced Research Centre; Kavli institute of nanoscience Delft) Date 2022 Abstract We grow 28Si/SiGe heterostructures by reduced-pressure chemical vapor deposition and terminate the stack without an epitaxial Si cap but with an amorphous Si-rich layer obtained by exposing the SiGe barrier to dichlorosilane at 500 °C. As a result, 28Si/SiGe heterostructure field-effect transistors feature a sharp semiconductor/dielectric interface and support a two-dimensional electron gas with enhanced and more uniform transport properties across a 100 mm wafer. At T = 1.7 K, we measure a high mean mobility of (1.8 ± 0.5) × 10 5 cm2/V s and a low mean percolation density of (9 ± 1) × 10 10 cm-2. From the analysis of Shubnikov-de Haas oscillations at T = 190 mK, we obtain a long mean single particle relaxation time of (8.1 ± 0.5) ps, corresponding to a mean quantum mobility and quantum level broadening of (7.5 ± 0.6) × 10 4 cm2/V s and (40 ± 3) μ eV, respectively, and a small mean Dingle ratio of (2.3 ± 0.2), indicating reduced scattering from long range impurities and a low-disorder environment for hosting high-performance spin-qubits. To reference this document use: http://resolver.tudelft.nl/uuid:e7fbc337-f9e2-4d28-ad1b-3dd8139f0f05 DOI https://doi.org/10.1063/5.0088576 Embargo date 2022-11-04 ISSN 0003-6951 Source Applied Physics Letters, 120 (18) Bibliographical note Green Open Access added to TU Delft Institutional Repository 'You share, we take care!' - Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public. Part of collection Institutional Repository Document type journal article Rights © 2022 D. Degli Esposti, B. Paquelet Wuetz, V. Fezzi, M. Lodari, A. Sammak, G. Scappucci Files PDF 5.0088576.pdf 2.49 MB Close viewer /islandora/object/uuid:e7fbc337-f9e2-4d28-ad1b-3dd8139f0f05/datastream/OBJ/view