Characterization of Single-Photon Avalanche Diodes in Standard 140-nm SOI CMOS Technology

Conference paper (2015)

Authors

M.J. Lee

P. Sun

E. Charbon

Department

Quantum Engineering () (TU Delft)

Silicon CMOS Avalanche photodiode (APD) Single-photon avalanche diode (SPAD) Backside illumination (BSI) Silicon on insulator (SOI) Standard SOI CMOS technology

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http://resolver.tudelft.nl/uuid:e9ed40ce-d223-48e2-89da-2daa38c6af16

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Published Date

08-06-2015

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Source:

IISW 2015: International Image Sensor Workshop, Vaals, The Netherlands, 8-11 June 2015

Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Quantum Engineering

Abstract

We report on the characterization of single-photon avalanche diodes (SPADs) fabricated in standard 140-nm silicon on insulator (SOI) complementary metal-oxide-semiconductor (CMOS) technology. As a methodology for SPAD optimization, a test structure array, called SPAD farm, was realized with several junctions, guard-ring structures, dimensions, etc. In this paper, characterization results of the most promising SOI CMOS SPAD are compared with state-of-the-art results reported in the literature.

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