Characterization and Compact Modeling of Nanometer CMOS Transistors at Deep-Cryogenic Temperatures

Characterization and Compact Modeling of Nanometer CMOS Transistors at Deep-Cryogenic Temperatures

Incandela, R.M. (TU Delft OLD QCD/Charbon Lab; TU Delft QuTech; Kavli institute of nanoscience Delft)
Song, L (TU Delft ImPhys/Quantitative Imaging; Analog Devices Inc.)
Homulle, Harald (TU Delft OLD QCD/Charbon Lab; TU Delft QuTech; Kavli institute of nanoscience Delft)
Charbon-Iwasaki-Charbon, E. (TU Delft OLD QCD/Charbon Lab; TU Delft (OLD)Applied Quantum Architectures; Intel Labs; Kavli institute of nanoscience Delft)
Vladimirescu, A. (University of California; Institut Supérieur d’Electronique de Paris,)
Sebastiano, F. (TU Delft (OLD)Applied Quantum Architectures)

QuTech

2018

Cryogenic characterization and modeling of two nanometer bulk CMOS technologies (0.16-μm and 40-nm) are presented in this paper. Several devices from both technologies were extensively characterized at temperatures of 4 K and below. Based on a detailed understanding of the device physics at deep-cryogenic temperatures, a compact model based on MOS11 and PSP was developed. In addition to reproducing the device DC characteristics, the accuracy and validity of the compact models are demonstrated by comparing time-and frequency-domain simulations of complex circuits, such as a ring oscillator and a low-noise amplifier (LNA), with the measurements at 4 K.

4 K
characterization
CMOS
CMOS technology
cryo-CMOS
cryogenic
Cryogenic electronics
Cryogenics
Integrated circuit modeling
kink
LNA.
modeling
MOS devices
Quantum computing
Semiconductor device modeling

http://resolver.tudelft.nl/uuid:f22c449c-beae-4504-a4a3-b5b9f791906a

https://doi.org/10.1109/JEDS.2018.2821763

IEEE Journal of the Electron Devices Society, 6

Institutional Repository

journal article

© 2018 R.M. Incandela, L Song, Harald Homulle, E. Charbon-Iwasaki-Charbon, A. Vladimirescu, F. Sebastiano