DRIE and Bonding Assisted Low Cost MEMS Processing of In-plane HAR Inertial Sensors

Conference paper (2008)

Authors

V. Rajaraman

K.A.A. Makinwa

P.J. French

Department

Microelectronics & Computer Engineering () (TU Delft)

Accelerometer Inertial Sensors Deep Reactive Ion Etching (DRIE) High Aspect Ratio MEMS Dry MEMS Release CMOS Compatible Post-processing Adhesive Wafer Bonding Plasma Wafer Thinning

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Published Date

12-10-2008

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Source:

Proceedings of the 7th IEEE Int. Conference on Advanced Semiconductor Devices and Microsystems (ASDAM 2008), Smolenice, Slovakia, October 12-16, 2008

Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics & Computer Engineering

Abstract

We present a simple, flexible and low cost MEMS fabrication process, developed using deep reactive ion etching (DRIE) and wafer bonding technologies, for manufacturing in-plane high aspect ratio (HAR) inertial sensors. Among examples, the design and fabrication results of a two axis inertial device are presented. Fabricated device thickness ranged up to 140 ?m and a HAR of 28 was obtained. Compared to the existing approaches reported in literature, the salient features of the presented process are: single-sided single-wafer processing using just two lithographic masks, capability to fabricate standalone MEMS as well as CMOS compatible MEMS post-processing via process variations, the use of plasma etching for wafer thinning that facilitates stictionless dry-release of MEMS, and its suitability for batch processing.

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