Mechanism of electronegativity heterojunction of nanometer amorphous-boron on crystalline silicon

Mechanism of electronegativity heterojunction of nanometer amorphous-boron on crystalline silicon: An overview

Sberna, P.M. (TU Delft EKL Processing)
Fang, Piet Xiaowen (Radboud Universiteit Nijmegen)
Fang, C. (TU Delft Electronic Instrumentation; Brunel University London)
Nihtianova, S. (TU Delft Electronic Instrumentation)

2021

The discovery of the extremely shallow amorphous boron-crystalline silicon heterojunction occurred during the development of highly sensitive, hard and robust detectors for low-penetration-depth ionizing radiation, such as ultraviolet photons and low-energy electrons (below 1 keV). For many years it was believed that the junction created by the chemical vapor deposition of amorphous boron on n-type crystalline silicon was a shallow p-n junction, although experimental results could not provide evidence for such a conclusion. Only recently, quantum-mechanics based modelling revealed the unique nature and the formation mechanism of this new junction. Here, we review the initiation and the history of understanding the a-B/c-Si interface (henceforth called the “boron-silicon junction”), as well as its importance for the microelectronics industry, followed by the scientific perception of the new junctions. Future developments and possible research directions are also discussed.

Chemical vapor deposition
Electronegativity
First principle molecular dynamics
Photodiode
Rectifying junction

http://resolver.tudelft.nl/uuid:05a6f995-73a2-4b6d-8ea8-e015a89984fd

https://doi.org/10.3390/cryst11020108

2073-4352

Crystals, 11 (2), 1-16

Institutional Repository

review

© 2021 P.M. Sberna, Piet Xiaowen Fang, C. Fang, S. Nihtianova