Print Email Facebook Twitter Elucidating the large variation in ion diffusivity of microelectronic packaging materials Title Elucidating the large variation in ion diffusivity of microelectronic packaging materials Author Herrmann, A. (Eindhoven University of Technology) van Soestbergen, M. (NXP Semiconductors) Erich, S. J.F. (Eindhoven University of Technology; TNO) van der Ven, L. G.J. (Eindhoven University of Technology) Huinink, H. P. (Eindhoven University of Technology) van Driel, W.D. (TU Delft Electronic Components, Technology and Materials; Signify) Mavinkurve, A. (NXP Semiconductors) De Buyl, F. (Dow Silicones Belgium s.r.l., Seneffe) Adan, O. C.G. (Eindhoven University of Technology; TNO) Date 2022 Abstract The risk of corrosion poses a challenge to meet the stringent reliability requirements of microelectronic devices that are used in harsh environments. Microelectronic devices are often encapsulated in polymer packaging materials, which protect them from corrosion. These polymers are, however, not completely hermetic and thus allow small amounts of ions and moisture to reach the device, which might cause corrosion of the microelectronic circuitry. To improve and predict the reliability of the device, it is important to quantify the ion diffusivity in these materials. Previously reported values for the ion diffusivity vary by multiple orders of magnitude for a single class of material. Here, we investigate the causes for this discrepancy using three experimental methods: (i) saltwater immersion, (ii) diffusion cell measurements, and (iii) transient electric current measurements. Several materials, such as silicone, epoxy, and polyamide, were tested to cover the broad spectrum of polymers used by the microelectronics industry. We found that the discrepancies are likely due to the strong dependence of the ion diffusivity on both the moisture content within the polymers, as well as on the salt concentration and pH of the solutes. Furthermore, we found that the very low ion diffusivity causes long measuring times, and thus a large risk for errors from contamination, leakage, or minor defects in the samples. Subject Diffusion cellIon diffusionMicroelectronic packagingMold compoundTOF-SIMS To reference this document use: http://resolver.tudelft.nl/uuid:2efc8aea-bfc6-4539-812a-d7bddbdeb5d8 DOI https://doi.org/10.1016/j.microrel.2022.114656 ISSN 0026-2714 Source Microelectronics Reliability, 136 Part of collection Institutional Repository Document type journal article Rights © 2022 A. Herrmann, M. van Soestbergen, S. J.F. Erich, L. G.J. van der Ven, H. P. Huinink, W.D. van Driel, A. Mavinkurve, F. De Buyl, O. C.G. Adan Files PDF 1_s2.0_S0026271422001809_main.pdf 2.26 MB Close viewer /islandora/object/uuid:2efc8aea-bfc6-4539-812a-d7bddbdeb5d8/datastream/OBJ/view