Print Email Facebook Twitter Charge-Transfer CMOS Image Sensors: Device and Radiation Aspects Title Charge-Transfer CMOS Image Sensors: Device and Radiation Aspects Author Ramachandra Rao, P. Contributor Theuwissen, A.J.P. (promotor) Faculty Electrical Engineering, Mathematics and Computer Science Department Electronic Instrumentation Date 2009-05-18 Abstract The aim of this thesis was twofold: investigating the effect of ionizing radiation on 4-T CMOS image sensors and the possibility of realizing a CCD like sensor in standard 0.18-?m CMOS technology (for medical applications). Both the aims are complementary; borrowing and lending many aspects of radiation and device physics amongst each other. Subject CMOS Image SensorsRadiation effectsCCD in standard CMOS To reference this document use: http://resolver.tudelft.nl/uuid:3530d929-e275-4ad1-9c05-9cc7ab7610a5 Embargo date 2009-07-30 ISBN 9789081331661 Part of collection Institutional Repository Document type doctoral thesis Rights (c) 2009 Ramachandra Rao, P. Files PDF P.Ramachandra_rao_thesis.pdf 5.91 MB Close viewer /islandora/object/uuid:3530d929-e275-4ad1-9c05-9cc7ab7610a5/datastream/OBJ/view