A nitride-based epitaxial surface layer formed by ammonia treatment of silicene-terminated ZrB2

Title

A nitride-based epitaxial surface layer formed by ammonia treatment of silicene-terminated ZrB2

 Author

Wiggers, F. B. (University of Twente)
Bui, H.V. (University of Twente)
Friedlein, R. (Meyer Burger (Germany) AG)
Yamada-Takamura, Y. (Japan Advanced Institute of Science and Technology)
Schmitz, J.E.J. (TU Delft Electrical Engineering, Mathematics and Computer Science; University of Twente)
Kovalgin, A. Y. (University of Twente)
de Jong, M (University of Twente)

Faculty

Electrical Engineering, Mathematics and Computer Science

 Date

2016-04-07

 Abstract

We present a method for the formation of an epitaxial surface layer involving B, N, and Si atoms on a ZrB2(0001) thin film on Si(111). It has the potential to be an insulating growth template for 2D semiconductors. The chemical reaction of NH3 molecules with the silicene-terminated ZrB2 surface was characterized by synchrotron-based, high-resolution core-level photoelectron spectroscopy and low-energy electron diffraction. In particular, the dissociative chemisorption of NH3 at 400 °C leads to surface nitridation, and subsequent annealing up to 830 °C results in a solid phase reaction with the ZrB2 subsurface layers. In this way, a new nitride-based epitaxial surface layer is formed with hexagonal symmetry and a single in-plane crystal orientation.


 Subject

Epitaxy
Photons
Semiconductor surfaces
Insulator surfaces
Nitridation

 To reference this document use:

http://resolver.tudelft.nl/uuid:48959287-f003-48a9-bfde-8d50a96aa250

 DOI

https://doi.org/10.1063/1.4944579

 Embargo date

2017-04-05

 ISSN

0021-9606

 Source

Journal of Chemical Physics, 144 (13), 1-5

 Part of collection

Institutional Repository

 Document type

journal article

 Rights

© 2016 F. B. Wiggers, H.V. Bui, R. Friedlein, Y. Yamada-Takamura, J.E.J. Schmitz, A. Y. Kovalgin, M de Jong
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