Print Email Facebook Twitter Integration of a gate electrode into carbon nanotube devices for scanning tunneling microscopy Title Integration of a gate electrode into carbon nanotube devices for scanning tunneling microscopy Author Kong, J. LeRoy, B.J. Lemay, S.G. Dekker, C. Faculty Applied Sciences Department Kavli Institute of Nanoscience Date 2005-03-08 Abstract We have developed a fabrication process for incorporating a gate electrode into suspended single-walled carbon nanotube structures for scanning tunneling spectroscopy studies. The nanotubes are synthesized by chemical vapor deposition directly on a metal surface. The high temperature (800?°C) involved in the growth process poses challenging issues such as surface roughness and integrity of the structure which are addressed in this work. We demonstrate the effectiveness of the gate on the freestanding part of the nanotubes by performing tunneling spectroscopy that reveals Coulomb blockade diamonds. Our approach enables combined scanning tunneling microscopy and gated electron transport investigations of carbon nanotubes. Subject platinumcarbon nanotubesnanotube devicesmetallic thin filmschemical vapour depositionsurface roughnessCoulomb blockadescanning tunnelling spectroscopy To reference this document use: http://resolver.tudelft.nl/uuid:5ad1bb5f-2b85-453a-a2ab-074db3f456f7 DOI https://doi.org/10.1063/1.1883301 Publisher American Institute of Physics ISSN 0003-6951 Source http://link.aip.org/link/APPLAB/v86/i11/p112106/s1 Source Applied Physics Letters, 86 (11), 2005 Part of collection Institutional Repository Document type journal article Rights (c) 2005 The Author(s); American Institute of Physics Files PDF Kong_2005.pdf 400.61 KB Close viewer /islandora/object/uuid:5ad1bb5f-2b85-453a-a2ab-074db3f456f7/datastream/OBJ/view