Sensing performance of plasma-enhanced chemical vapor deposition SiC-SiO2-SiC horizontal slot waveguides

Journal article (2012)
Department
Delft Institute of Microsystems and Nanoelectronics (EEMCS) (TU Delft)
Copyright: ©2012 Pandraud, G., Margallo-Balbas, E., Sarro, P.M. and SPIE
DOI: https://doi.org/doi:10.1117/1.JNP.6.063530
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Published Date

22-11-2012

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Source:

Journal of Nanophotonics, 6(1)2012

Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Delft Institute of Microsystems and Nanoelectronics

Abstract

We have studied, for the first time, the sensing capabilities of plasma-enhanced chemical vapor deposition (PECVD) SiC-SiO2-SiC horizontal slot waveguides. Optical propagation losses were measured to be 23.9 dB?cm for the quasi-transverse magnetic mode. To assess the potential of this device as a sensor, we simulated the confinement factor in the slot. This simulation revealed that SiC-based slot waveguides can be used, advantangeously, for sensing as the confinement strongly varies with the refractive index of the slot material. A confinement factor change of 0.15?refractive index units was measured for different slot materials

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