Fabrication of AlN slender piezoelectric cantilevers for highspeed MEMS actuations

Journal article (2011)

Authors

A.T. Tran

G. Pandraud

H. Schellevis

T. Alan

V. Aravindh

O. Wunnicke

P.M. Sarro

Department

Microelectronics () (TU Delft)

DOI: https://doi.org/doi:10.1016/j.proeng.2011.12.166

AlN Ti electrode Piezoelectric cantilevers High-speed MEMS actuation

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Published Date

04-09-2011

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Source:

Procedia Engineering, 25, 2011

Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Abstract

Very thin piezoelectric cantilevers based on AlN layers using titanium Ti thin film electrodes are fabricated and characterized. By optimizing the Ti sputtering parameters, a very low stress (156 MPa) layers stack with high crystallinity and strong (002) orientation of the AlN films is obtained. Finally, a simple fabrication process, fully CMOS compatible, is developed to realize slender (900 nm) piezoelectric microcantilevers. A resonant frequency of 19.3 kHz is measured for 200 ?m long cantilevers. The deflection of cantilever is 6 nm/V and 189 nm/V for quasistatics and resonant frequency actuation, respectively. This makes the fabricated cantilevers attractive for high-speed MEMS actuators.

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