Frequency References Based on the Thermal Diffusivity of Silicon and Silicon Dioxide
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Abstract
Conventional methods of generating accurate on-chip frequencies are based on electrical components such as resistors, capacitors, and inductors. Recently, a new type of frequency reference based on the thermal diffusivity (TD) of silicon has been introduced. Such TD frequency references rely on the well defined thermal-domain properties of silicon, rather than on the stability of electrical components. This thesis explores various ways of improving the performance of TD frequency references.
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