Print Email Facebook Twitter First demonstration of l-band high-power limiter with gan schottky barrier diodes (Sbds) based on steep-mesa technology Title First demonstration of l-band high-power limiter with gan schottky barrier diodes (Sbds) based on steep-mesa technology Author Sun, Y. (TU Delft Electronic Components, Technology and Materials; Shenzhen Institute of Wide-bandgap Semiconductors; Chinese Academy of Sciences) Kang, Xuanwu (Chinese Academy of Sciences) Deng, Shixiong (National University of Defense Technology; Hebei Semiconductor Research Institute) Zheng, Yingkui (Chinese Academy of Sciences) Wei, Ke (Chinese Academy of Sciences) Xu, Linwang (Hebei Semiconductor Research Institute) Wu, Hao (Chinese Academy of Sciences) Liu, Xinyu (Chinese Academy of Sciences) Date 2021 Abstract Gallium nitride (GaN) has attracted increased attention because of superior material properties, such as high electron saturation velocity and high electrical field strength, which are promising for high-power microwave applications. We report on a high-performance vertical GaN-based Schottky barrier diode (SBD) and its demonstration in a microwave power limiter for the first time. The fabricated SBD achieved a very low differential specific on-resistance (RON,sp) of 0.21 mΩ·cm2, attributed to the steep-mesa technology, which assists in reducing the spacing between the edge of the anode and cathode to 2 µm. Meanwhile, a low leakage current of ~10−9 A/cm2@−10 V, a high forward current density of 9.4 kA/cm2 at 3 V in DC, and an ideality factor of 1.04 were achieved. Scattering parameter measurements showed that the insertion loss (S21 ) was lower than −3 dB until 3 GHz. In addition, a microwave power limiter circuit with two anti-parallel diodes was built and measured on an alumina substrate. The input power level reached 40 dBm (10 watts) in continuous-wave mode at 2 GHz, with a corresponding leakage power of 27.2 dBm (0.5 watts) at the output port of the limiter, exhibiting the great potential of GaN SBD in microwave power limiters. Subject GaN SBDHigh powerL bandSchottky diode limiterVertical To reference this document use: http://resolver.tudelft.nl/uuid:faf5c6e1-3b93-4c35-b5b4-b0c78b59bb86 DOI https://doi.org/10.3390/electronics10040433 Source Electronics (Switzerland), 10 (4), 1-8 Part of collection Institutional Repository Document type journal article Rights © 2021 Y. Sun, Xuanwu Kang, Shixiong Deng, Yingkui Zheng, Ke Wei, Linwang Xu, Hao Wu, Xinyu Liu Files PDF electronics_10_00433.pdf 1.38 MB Close viewer /islandora/object/uuid:faf5c6e1-3b93-4c35-b5b4-b0c78b59bb86/datastream/OBJ/view