Characterization of Thermal Expansion Coefficient of LPCVD Polycrystalline SiC Thin Films Using Two Section V-beam Actuators

In this paper we present the characterization of the coefficient of thermal expansion (CTE) of in-situ doped polycrystalline SiC thin films, obtained by low pressure chemical vapor deposition (LPCVD). The material is characterized using V-beam actuators on which the temperature coefficient of resistance (TCR) and the in-plane displacement...