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Papadopoulos, N. (author), Frisenda, Riccardo (author), Biele, Robert (author), Flores, Eduardo (author), Ares, Jose R. (author), Sánchez, Carlos (author), van der Zant, H.S.J. (author), Ferrer, Isabel J. (author), D'Agosta, Roberto (author), Castellanos-Gomez, Andres (author)TiS<sub>3</sub> nanosheets have proven to be promising candidates for ultrathin optoelectronic devices due to their direct narrow band-gap and the strong light-matter interaction. In addition, the marked in-plane anisotropy of TiS<sub>3</sub> is appealing for the fabrication of polarization sensitive optoelectronic devices. Herein, we study...journal article 2018
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Molina-Mendoza, Aday J. (author), Island, J.O. (author), Paz, Wendel S. (author), Clamagirand, Jose Manuel (author), Ares, Jose Ramón (author), Flores, Eduardo (author), Leardini, Fabrice (author), Sánchez, Carlos (author), Agraït, Nicolás (author), Rubio-Bollinger, Gabino (author), van der Zant, H.S.J. (author), Ferrer, Isabel J. (author), Palacios, JJ (author), Castellanos-Gomez, Andres (author)The high field transport characteristics of nanostructured transistors based on layered materials are not only important from a device physics perspective but also for possible applications in next generation electronics. With the growing promise of layered materials as replacements to conventional silicon technology, the high current density...journal article 2017