Investigation on Transient Failure Mode of Asymmetric Trench Gate SiC MOSFET Under Single-Pulse Avalanche Stress

In this article, the avalanche withstand capability and transient failure model of commercial 1200 V asymmetric trench gate SiC MOSFETs are investigated by experiment and simulation under single-pulse unclamped inductive switching (UIS) conditions. The limiting avalanche current and limiting avalanche energy of the device are determined by...

High-Voltage and High-Current IGBT Press-pack Module for Power Grid

On the basis of the development and application requirements of flexible DC transmission techniques, a 1 kA/10 kV half-bridge IGBT press-pack module is studied. The module is composed of three subunits in series, and each subunit consists of IGBT chips in parallel. In order to solve the problem of chips failure caused by non-uniform rigid...

Effects of shell thickness on the thermal stability of Cu-Ag core-shell nanoparticles: A molecular dynamics study

Cu-Ag core-shell (CS) nanoparticle (NP) is considered as a cost-effective alternative material to nano silver sintering material in die attachment application. To further reduce the cost, the thickness of the Ag shell can be adjusted. Whereas the shell thickness will also affect the thermal stability of the Cu-Ag CSNPs. In this study, molecular...

Study on Reverse Recovery of a P-pillar Tunable Super-Junction MOSFET*

In this paper, a novel bubble-shift super junction (SJ) MOSFET structure is proposed, and its main static electrical parameters and reverse recovery characteristics are simulated by TCAD software tool. By designing the P-pillar ion implantation windows with a certain offset, the bubble-shift SJ-MOSFET contains a curved pillar region in the upper...

A TCAD Simulation Study on the Short-circuit Performance of 650V P-pillar Offset Super-junction MOSFET

The limitation of Silicon based power MOSFET was broken by the super-junction (SJ) structure, which can provide lower specific on-resistance and higher breakdown voltage compared with the conventional power MOSFET structure. Multi-epitaxial and multi-ion-implant technology, as a mature manufacturing process of the SJ structure, has been widely...

Research on Thermal-Mechanical Properties of GaN Power Module Based on QFN Package by Using Nano Copper/Silver Sinter Paste

The wide-bandgap semiconductors represented by GaN have a broad application prospect because of their high service temperature and high switch frequency. Quad-Flat-No-Lead (QFN) Package is currently one of the mainstream packaging methods due to its low cost and high efficiency. However, the low reliability of QFN used in GaN devices is still...