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Sakic, A. (author), Scholtes, T.L.M. (author), De Boer, W.B. (author), Golshani, N. (author), Derakhshandeh, J. (author), Nanver, L.K. (author)An arsenic doping technique for depositing up to 40-?m-thick high-resistivity layers is presented for fabricating diodes with low RC constants that can be integrated in closely-packed configurations. The doping of the as-grown epi-layers is controlled down to 5 × 1011 cm?3, a value that is solely limited by the cleanness of the epitaxial reactor...journal article 2011
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- Tajari Mofrad, M.R. (author), Huet, K. (author), Boniface, C. (author), Ishihara, R. (author), Derakhshandeh, J. (author), Van der Cingel, J. (author) journal article 2010
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Ishihara, R. (author), Baiano, A. (author), Chen, T. (author), Derakhshandeh, J. (author), Tajari Mofrad, M.R. (author), Danesh, M. (author), Saputra, N. (author), Long, J. (author), Beenakker, C.I.M. (author)Single-grain Si TFTs have been fabricated using accurate 2D location control of large Si grain with the ?-Czochralski process. TFTs fabricated inside the crystalline islands of 6 ?m show a mobility (600cm2/Vs) as high as that of the SOI counterpart, despite of the low-temperature (<350oC) process. By applying a tensile stress into the grain, the...journal article 2009