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Yao, Z. (author), Yang, G. (author), Han, C. (author), Procel Moya, P.A. (author), Özkol, E. (author), Yan, J. (author), Zhao, Y. (author), Cao, L. (author), van Swaaij, R.A.C.M.M. (author), Mazzarella, L. (author), Isabella, O. (author)Passivating contacts are crucial for realizing high-performance crystalline silicon solar cells. Herein, contact formation by plasma-enhanced chemical vapor deposition (PECVD) followed by an annealing step is focused on. Poly-SiO<sub>x</sub> passivating contacts by combining plasma-assisted N<sub>2</sub>O-based oxidation of silicon (PANO-SiO...journal article 2023
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Han, C. (author), Mazzarella, L. (author), Zhao, Y. (author), Yang, G. (author), Procel Moya, P.A. (author), Tijssen, M. (author), Bento Montes, A.R. (author), Isabella, O. (author), Zeman, M. (author)Broadband transparent conductive oxide layers with high electron mobility (μ<sub>e</sub>) are essential to further enhance crystalline silicon (c-Si) solar cell performances. Although metallic cation-doped In<sub>2</sub>O<sub>3</sub> thin films with high μ<sub>e</sub> (>60 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup>) have been extensively...journal article 2019
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Procel Moya, P.A. (author), Yang, G. (author), Isabella, O. (author), Zeman, M. (author)This paper presents an analysis of physical mechanisms related to operation and optimization of interdigitated back contact (IBC) poly-silicon-based devices. Concepts of carrier selectivity and tunneling are used to identify the parameters that impact on the fill factor. Then, based on technology computer-aided design (TCAD) numerical...journal article 2019