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Guo, Xiaoyang (author), van de Kleut, Dick (author), Zhang, J. (author), Chen, C. (author), Wang, Xuehang (author), Zheng, Tianye (author), Boles, Steven (author)
Activated carbon has long been recognized as a promising electrode material for energy storage devices. The extraordinarily high specific area makes it challenging to replace in supercapacitors since electrical double-layer capacitors need such surfaces but also porous networks to enable electrolyte penetration. As a raw material for...
journal article 2024
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Zhang, Jingping (author), Luo, Houcai (author), Wu, Huan (author), Wang, Zeping (author), Zheng, Bofeng (author), Zhang, Kouchi (author), Chen, Xianping (author)
A novel 4H-SiC Multiple Stepped SGT MOSFET (MSGT-MOSFET) is presented and investigated utilizing TCAD simulations in this paper. We have quantitatively studied the characteristics of the device through simulation modeling and physical model calculations, and comparatively analyzed the performance and application prospects of this novel device...
journal article 2023
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Wu, Huan (author), Luo, Houcai (author), Zhang, Jingping (author), Zheng, Bofeng (author), Lang, Lei (author), Wang, Zeping (author), Zhang, Kouchi (author), Chen, Xianping (author)
To investigate the unclamped inductive switch (UIS) characteristics, 1200 V silicon carbide (SiC) planar MOSFETs with four cell topologies of linear, current sharing linear, square, and hexagon are designed and manufactured. The experimental platform was built and tested. The results show that the single pulse avalanche energy density of the...
journal article 2023