Magnetic Coupling Based Test Development for Contact and Interconnect Defects in STT-MRAMs

The development of Spin-Transfer Torque Magnetic RAMs (STT-MRAMs) mass production requires high-quality test solutions. Accurate and appropriate fault modeling is crucial for the realization of such solutions. This paper targets fault modeling and test generation for all interconnect and contact defects in STT-MRAMs and shows that using the...

Data Background-Based Test Development for All Interconnect and Contact Defects in RRAMs

Resistive Random Access Memory (RRAM) is a potential technology to replace conventional memories by providing low power consumption and high-density storage. As various manufacturing vendors make significant efforts to push it to high-volume production and commercialization, high-quality and efficient test solutions are of great importance. This...

Investigation on Transient Failure Mode of Asymmetric Trench Gate SiC MOSFET Under Single-Pulse Avalanche Stress

In this article, the avalanche withstand capability and transient failure model of commercial 1200 V asymmetric trench gate SiC MOSFETs are investigated by experiment and simulation under single-pulse unclamped inductive switching (UIS) conditions. The limiting avalanche current and limiting avalanche energy of the device are determined by...

LES-based numerical analysis of surface-pressure fluctuations and unsteady thrust of a marine propeller

Intrinsic self-healing of polymer solid while keeping integrity and load-bearing capability

Generally, intrinsic self-healing polymers based on reversible covalent bonds scission and reconnection would lose their load bearing capability as a result of molecular cleavage during healing process. This shortcoming also results in creep deformation of the products. To solve the problem, we introduce a novel healing mechanism by using...

Mechanical Characterization of III-V Nanowire Using Molecular Dynamics Simulation

The chemical-mechanical relationship of the SiOC(H) dielectric film