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Chen, Wei (author), Yan, Xuyang (author), Ibrahim, Mesfin S. (author), Meda, Abdulmelik H. (author), Fan, X. (author), Zhang, Kouchi (author), Fan, J. (author)
As the next generation of semiconductor devices, SiC MOSFETs have demonstrated significant performance improvements in switching loss, switching frequency, and high-temperature operation compared to Si-based MOSFETs. However, the long-term reliability of such devices and their packaging continues to be a major concern. Towards addressing this...
conference paper 2023
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Fan, Jiajie (author), Qian, Yichen (author), Chen, Wei (author), Jiang, Jing (author), Tang, Zhuorui (author), Fan, Xuejun (author), Zhang, Kouchi (author)
A fan-out panel-level packaging (FOPLP) with an embedded redistribution layer (RDL) via interconnection reduces the size, thermal resistance, and parasitic inductance of power module packaging. In this study, the effect of the RDL via size on the reliability of a FOPLP SiC MOSFET power module was investigated. To improve the thermal management...
conference paper 2022
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Jiang, Jing (author), Chen, Wei (author), Qian, Yichen (author), Meda, Abdulmelik H. (author), Fan, X. (author), Zhang, Kouchi (author), Fan, J. (author)
Considerable advancements in power semiconductor devices have resulted in such devices being increasingly adopted in applications of energy generation, conversion, and transmission. Hence, we proposed a fan-out panel-level packaging (FOPLP) design for 30-V Si-based metal-oxide-semiconductor field-effect transistor (MOSFET). To achieve...
journal article 2023