Analysis of RNAseq datasets from a comparative infectious disease zebrafish model using GeneTiles bioinformatics

We present a RNA deep sequencing (RNAseq) analysis of a comparison of the transcriptome responses to infection of zebrafish larvae with Staphylococcus epidermidis and Mycobacterium marinum bacteria. We show how our developed GeneTiles software can improve RNAseq analysis approaches by more confidently identifying a large set of markers upon...

Quantifying self-absorption losses in luminescent solar concentrators

Analytical equations quantifying self-absorption losses in circular luminescent solar concentrators (LSCs) are presented that can easily be solved numerically by commercial math software packages. With the quantum efficiency, the absorption and emission spectra of a luminescent material, the LSC dimensions, and the refractive index as the only...

Efficiency enhancement calculations of state-of-the-art solar cells by luminescent layers with spectral shifting, quantum cutting, and quantum tripling function

Solar cells of which the efficiency is not limited by the Shockley-Queisser limit can be obtained by integrating a luminescent spectral conversion layer into the cell structure. We have calculated the maximum efficiency of state-of-the-art c-Si, pc-Si, a-Si, CdTe, GaAs, CIS, CIGS, CGS, GaSb, and Ge solar cells with and without an integrated...

Direct hole and delayed electron capture on a picosecond timescale by Eu2+ centers in CaGa2S4 monitored by synchroscan with horizontal blanking

A Eu2+ concentration and temperature dependent energy transfer study from the host lattice to Eu2+ luminescence centers in Ca(1–x)EuxGa2S4 (x = 0.001 to 0.05) was performed with a special streak camera that combines the high timing resolution of a conventional synchroscan operation (<2 ps) with the ability to study long lived states (10?ns???1...

Systematics in the optical and electronic properties of the binary lanthanide halide, chalcogenide and pnictide compounds: An overview

The basic optical, electrical and chemical properties of the binary divalent, trivalent and tetravalent lanthanide (Ln = La, . . . , Lu) halides (F, Cl, Br and I), chalcogenides (O, S, Se and Te) and pnictides (N, P, As and Sb) were studied using an empirical model that utilizes the systematic behaviour in the energy difference between the...

Lanthanide 4f-level location in AVO4:Ln3+ (A = La, Gd, Lu) crystals

The spectral properties of LaVO4, GdVO4 and LuVO4 crystals doped with Ce3+, Pr3+, Eu3+ or Tb3+ have been investigated in order to determine the position of the energy levels relative to the valence and conduction bands of the hosts along the trivalent and divalent lanthanide series. Pr3+ and Tb3+ ground state levels are positioned based on the...

The thermally induced metal–semiconducting phase transition of samarium monosulfide (SmS) thin films

High quality phase pure samarium monosulfide (SmS) thin films were prepared by electron beam evaporation using a samarium metal source in a H2S atmosphere. The optical properties (reflection, transmission, absorption) of the films in the semiconducting and metallic phase were analysed from the UV to the mid-IR and explained in terms of the...

Controlled electron and hole trapping in YPO4:Ce3+,Ln3+ and LuPO4:Ce3+,Ln3+ (Ln=Sm, Dy, Ho, Er, Tm)

A detailed and systematic electron trapping study was conducted in the scientifically important wide band-gap materials LuPO4 and YPO4 doubly doped with Ce3+ and Ln3+ (Ln=Sm, Dy, Ho, Er, Tm). By using vacuum-ultraviolet luminescence spectroscopy and detailed thermoluminescence spectroscopy it was possible to establish by two independent methods...

Lanthanide 4f-level location in lanthanide doped and cerium-lanthanide codoped NaLaF4 by photo- and thermoluminescence

Photo- and thermoluminescence (TL) spectra of NaLaF4:Ln3+ (Ln = Ce,Pr,Nd,Sm,Eu,Gd,Tb,Dy,Ho,Er,Tm) and NaLaF4:Ce3+, Ln3+ (Ln = Nd,Sm,Ho,Er,Tm) are presented and used together with the empirical Dorenbos model in order to establish the 4f energy level positions of all tri- and divalent lanthanide ions doped in NaLaF4. The information will be...

High-resolution luminescence spectroscopy study of down-conversion routes in NaGdF4:Nd3+ and NaGdF4:Tm3+ using synchrotron radiation

Luminescence quenching by photoionization and electron transport in a LaAlO3:Ce3+ crystal

A combined photoconductivity, absorption, and thermoluminescence study was performed to understand the absence of luminescence from Ce3+ in LaAlO3:Ce3+. It is demonstrated that the absence of luminescence is the result of Ce3+ ionization from the 5d excited states, which are all located in the conduction band. Ce3+ ionization is accompanied by...

Location of lanthanide impurity levels in the III-V semiconductor GaN

Knowledge from lanthanide spectroscopy on wide band gap (6–10?eV) inorganic compounds is used to understand and predict optical and electronic properties of the lanthanides in the III-V semiconductor GaN. For the first time the location of the 4fn ground state energy of each divalent and trivalent lanthanide ion relative to the valence and...

Temperature dependent spectroscopic studies of the electron delocalization dynamics of excited Ce ions in the wide band gap insulator, Lu2SiO5

Electron delocalization processes of optically excited states of Ce3+ impurities in Lu2SiO5 were investigated by means of a temperature and spectrally resolved photoconductivity study. By monitoring separately the strength of the photocurrent resulting from excitation into each of the Ce3+?5d absorption bands, over a broad temperature region,...