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Feng, Xiangdong (author), Luo, Yuxuan (author), Cai, Tianyi (author), Xuan, Yangfan (author), Zhang, Yunshan (author), Shen, Yili (author), Yang, Changgui (author), Xiao, Qijing (author), Du, S. (author), Zhao, Bo (author)
The growing trend of the Internet of Things (IoT) involves trillions of sensors in various applications. An extensive array of parameters need to be gathered concurrently with high-precision, low-cost, and low-power sensor nodes, such as resistive (R) and capacitive (C) sensors. Single-chip channel fusion can be an effective solution, while...
journal article 2024
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Yun, Minghui (author), Cai, Miao (author), Yang, Daoguo (author), Yang, Yiren (author), Xiao, Jing (author), Zhang, Kouchi (author)
Bond wire damage is one of the most common failure modes of metal-oxide semiconductor field-effect transistor (MOSFET) power devices in wire-welded packaging. This paper proposes a novel bond wire damage detection approach based on two-port network measurement by identifying the MOSFET source parasitic inductance (LS). Numerical calculation...
journal article 2022
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Yun, Minghui (author), Yang, Daoguo (author), He, Siliang (author), Cai, Miao (author), Xiao, Jing (author), Zhang, Kailin (author), Zhang, Kouchi (author)
With the emerging wide bandgap (WBG) semiconductor development, the increasing power density and efficiency of power electronic converters may cause more switching oscillation, electromagnetic interference noise, and additional power loss, further increasing the probability of device failure. Therefore, determining and quantifying the failure...
journal article 2022