A 23-μW Keyword Spotting IC With Ring-Oscillator-Based Time-Domain Feature Extraction

This article presents the first keyword spotting (KWS) IC that uses a ring-oscillator-based time-domain processing technique for its analog feature extractor (FEx). Its extensive usage of time-encoding schemes allows the analog audio signal to be processed in a fully time-domain manner except for the voltage-to-time conversion stage of the...

Electrical control of the g tensor of the first hole in a silicon MOS quantum dot

Single holes confined in semiconductor quantum dots are a promising platform for spin-qubit technology, due to the electrical tunability of the g factor of holes. However, the underlying mechanisms that enable electric spin control remain unclear due to the complexity of hole-spin states. Here, we study the underlying hole-spin physics of the...

H /e Superconducting Quantum Interference through Trivial Edge States in InAs

Josephson junctions defined in strong spin orbit semiconductors are highly interesting for the search for topological systems. However, next to topological edge states that emerge in a sufficient magnetic field, trivial edge states can also occur. We study the trivial edge states with superconducting quantum interference measurements on...

Decoupling Edge Versus Bulk Conductance in the Trivial Regime of an InAs/GaSb Double Quantum Well Using Corbino Ring Geometry

A Corbino ring geometry is utilized to analyze edge and bulk conductance of InAs/GaSb quantum well structures. We show that edge conductance exists in the trivial regime of this theoretically predicted topological system with a temperature-insensitive linear resistivity per unit length in the range of 2 kΩ/μm. A resistor network model of the...

Electric and Magnetic Tuning Between the Trivial and Topological Phases in InAs/GaSb Double Quantum Wells

Among the theoretically predicted two-dimensional topological insulators, InAs/GaSb double quantum wells (DQWs) have a unique double-layered structure with electron and hole gases separated in two layers, which enables tuning of the band alignment via electric and magnetic fields. However, the rich trivial-topological phase diagram has yet to be...

Gate-tunable high mobility remote-doped InSb/In1?xAlxSb quantum well

Gate-tunable high-mobility InSb/In1?xAlxSb quantum wells (QWs) grown on GaAs substrates are reported. The QW two-dimensional electron gas (2DEG) channel mobility in excess of 200?000?cm2/V?s is measured at T?=?1.8?K. In asymmetrically remote-doped samples with an HfO2 gate dielectric formed by atomic layer deposition, parallel conduction is...

Computational modelling of traffic flows

A model of transient single-lane traffic flows is proposed, taking into account the basic components used to control road traffic (traffic lights and “sleeping policemen”), which is radically different from those traditionally considered in continuum mechanics. The model takes into account the main property of traffic flows, namely, the property...