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Liu, Ke (author), Tan, C. (author), Li, Shizhen (author), Yuan, Wucheng (author), Liu, X. (author), Zhang, Kouchi (author), French, P.J. (author), Ye, H. (author), Wang, S. (author)
This paper proposes and simulates research on the reverse recovery characteristics of two novel superjunction (SJ) MOSFETs by adjusting the doping profile. In the manufacturing process of the SJ MOSFET using multilayer epitaxial deposition (MED), the position and concentration of each Boron bubble can be adjusted by designing different doping...
journal article 2023
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Wang, S. (author), Zong, Qihang (author), Yang, Huiru (author), Tan, C. (author), Huang, Qianming (author), Liu, X. (author), Zhang, Kouchi (author), French, P.J. (author), Ye, H. (author)
The fabrication of flexible pressure sensors with low cost, high scalability, and easy fabrication is an essential driving force in developing flexible electronics, especially for high-performance sensors that require precise surface microstructures. However, optimizing complex fabrication processes and expensive microfabrication methods...
journal article 2023
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Wang, S. (author), Yang, Huiru (author), Zong, Qihang (author), Huang, Qianming (author), Tan, C. (author), Gao, Chenshan (author), Li, Shizhen (author), Ye, H. (author), Zhang, Kouchi (author), French, P.J. (author)
In recent years, metal crack-based stretchable flexible strain sensors have attracted significant attention in wearable device applications due to their extremely high sensitivity. However, the tradeoff between sensitivity and detection range has been an intractable dilemma, severely limiting their practical applications. Herein, we propose a...
journal article 2023
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Wang, S. (author), Tan, Yanlong (author), Liu, Xu (author), Li, Shizhen (author), Liu, Ke (author), Yuan, Wucheng (author), Li, Tao (author), Zhang, Kouchi (author), French, P.J. (author), Ye, Huaiyu (author), Tan, Chunjian (author)
In this article, the avalanche withstand capability and transient failure model of commercial 1200 V asymmetric trench gate SiC MOSFETs are investigated by experiment and simulation under single-pulse unclamped inductive switching (UIS) conditions. The limiting avalanche current and limiting avalanche energy of the device are determined by...
conference paper 2023
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