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Chen, Wei (author), Yan, Xuyang (author), Ibrahim, Mesfin S. (author), Meda, Abdulmelik H. (author), Fan, X. (author), Zhang, Kouchi (author), Fan, J. (author)
As the next generation of semiconductor devices, SiC MOSFETs have demonstrated significant performance improvements in switching loss, switching frequency, and high-temperature operation compared to Si-based MOSFETs. However, the long-term reliability of such devices and their packaging continues to be a major concern. Towards addressing this...
conference paper 2023