Front and rear contact Si solar cells combining high and low thermal budget Si passivating contacts

In this work we develop a rear emitter silicon solar cell integrating carrier-selective passivating contacts (CSPCs) with different thermal budget in the same device. The solar cell consists of a B-doped poly-Si/SiO_x hole collector and an i/n hydrogenated amorphous silicon (a-Si:H) stack acting as electron collector placed on the...

Numerical Simulations of IBC Solar Cells Based on Poly-Si Carrier-Selective Passivating Contacts

This paper presents an analysis of physical mechanisms related to operation and optimization of interdigitated back contact (IBC) poly-silicon-based devices. Concepts of carrier selectivity and tunneling are used to identify the parameters that impact on the fill factor. Then, based on technology computer-aided design (TCAD) numerical...

Poly-crystalline silicon-oxide films as carrier-selective passivating contacts for c-Si solar cells

The poly-Si carrier-selective passivating contacts (CSPCs) parasitically absorb a substantial amount of light, especially in the form of free carrier absorption. To minimize these losses, we developed CSPCs based on oxygen-alloyed poly-Si (poly-SiO_x) and deployed them in c-Si solar cells. Transmission electron microscopy analysis...

Theoretical evaluation of contact stack for high efficiency IBC-SHJ solar cells

In this work we present a theoretical analysis of charge carriers transport mechanisms in IBC-SHJ solar cells. The concepts of contact and transport selectivity are correlated through the band bending at c-Si interface and are used to identify thin-film silicon parameters affecting fill factor (FF) and open-circuit voltage (V_OC)....

High-efficiency black IBC c-Si solar cells with poly-Si as carrier-selective passivating contacts

In this work, we present the application of poly-Si carrier-selective passivating contacts (CSPCs) as both polarities in interdigitated back-contacted (IBC) solar cell architectures. We compared two approaches to form a gap between the back-surface field (BSF) and emitter fingers. It is proved that the gaps prepared by both approaches are...

Poly-Si(O)x passivating contacts for high-efficiency c-Si IBC solar cells

Highest conversion efficiency in crystalline silicon (c-Si) solar cells can be enabled by quenching minority carriers' recombination at c-Si/contact interface owing to carrier-selective passivating contacts. With the semi-insulating poly-crystalline silicon (SIPOS, poly-Si) a very good passivation of c-Si surfaces was obtained. We have...