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Hou, F. (author), Wang, W. (author), Cao, Liqiang (author), Li, Jun (author), Su, Meiying (author), Lin, Tingyu (author), Zhang, Kouchi (author), Ferreira, Jan Abraham (author)
SiC devices are promising for outperforming Si counterparts in high-frequency applications due to its superior material properties. Conventional wirebonded packaging scheme has been one of the most preferred package structures for power modules. However, the technique limits the performance of a SiC power module due to parasitic inductance...
review 2020