A 1024-Channel 268 nW/pixel 36x36 μm²/ch Data-Compressive Neural Recording IC for High-Bandwidth Brain-Computer Interfaces

This paper presents a neural recording IC featuring lossy compression during digitization, thus preventing data deluge and enabling a compact active digital pixel design. The wired-OR-based compression discards unwanted baseline samples while allowing the reconstruction of spike samples. The IC features a 32x32 MEA with 36 μ m pixel pitch and...

A 5800-μm² Resistor-Based Temperature Sensor with a One-Point Trimmed Inaccuracy of ±1.2 °c (3σ) from -50 °c to 105 °c in 65-nm CMOS

This letter describes a compact resistor-based temperature sensor intended for the thermal monitoring of microprocessors and DRAMs. It consists of an RC poly phase filter (PPF) that is read out by a frequency-locked loop (FLL) based on a dual zero-crossing (ZC) detection scheme. The sensor,fabricated in 65-nm CMOS,occupies 5800 μm²...

A 0.53pJK27000μm2resistor-based temperature sensor with an inaccuracy of ±0.35°C (3σ) in 65nm CMOS

In microprocessors and DRAMs, on-chip temperature sensors are essential components, ensuring reliability by monitoring thermal gradients and hot spots. Such sensors must be as small as possible, since multiple sensors are required for dense thermal monitoring. However, conventional BJT-based temperature sensors are not compatible with the sub...

Shape-controlled tio₂ nanomaterials-based hybrid solid-state electrolytes for solar energy conversion with a mesoporous carbon electrocatalyst

One-dimensional (1D) titanium dioxide (TiO₂₎ is prepared by hydrothermal method and incorporated as nanofiller into a hybrid polymer matrix of polyethylene glycol (PEG) and employed as a solid-electrolyte in dye-sensitized solar cells (DSSCs). Mesoporous carbon electrocatalyst with a high surface area is obtained by the...

A 5800-μ m ₂Resistor-Based Temperature Sensor with a One-Point Trimmed Inaccuracy of ±1.2 °c (3σ) From-50 °c to 105 °c in 65-nm CMOS

This letter describes a compact resistor-based temperature sensor intended for the thermal monitoring of microprocessors and DRAMs. It consists of an RC poly phase filter (PPF) that is read out by a frequency-locked loop (FLL) based on a dual zero-crossing (ZC) detection scheme. The sensor, fabricated in 65-nm CMOS, occupies 5800 μ m2 and...

A Compact Resistor-Based CMOS Temperature Sensor With an Inaccuracy of 0.12 °C (3σ) and a Resolution FoM of 0.43 pJ·K² in 65-nm CMOS

This paper presents a compact resistor-based CMOS temperature sensor intended for dense thermal monitoring. It is based on an RC poly-phase filter (PPF), whose temperature-dependent phase shift is read out by a frequency-locked loop (FLL). The PPF's phase shift is determined by a zero-crossing (ZC) detector, allowing the rest of the FLL to be...