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Wu, Chengwei (author), Yao, Weiran (author), Pan, W. (author), Sun, Guanghui (author), Liu, Jianxing (author), Wu, Ligang (author)
This article investigates the secure control problem for cyber-physical systems when the malicious data are injected into the cyber realm, which directly connects to the actuators. Based on moving target defense (MTD) and reinforcement learning, we propose a novel proactive and reactive defense control scheme. First, the system (A,B) is...
journal article 2021
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Wu, L. (author), Rao, Siddharth (author), Taouil, M. (author), Marinissen, Erik Jan (author), Kar, Gouri Sankar (author), Hamdioui, S. (author)
The manufacturing process of STT-MRAM requires unique steps to fabricate and integrate magnetic tunnel junction (MTJ) devices which are data-storing elements. Thus, understanding the defects in MTJs and their faulty behaviors are paramount for developing high-quality test solutions. This article applies the advanced device-aware test to...
journal article 2022
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Xu, J. (author), Soeiro, Thiago B. (author), Wu, Y. (author), Gao, Fei (author), Wang, Y. (author), Tang, Houjun (author), Bauer, P. (author)
A three-phase buck-type rectifier features a step-down ac-dc conversion function, which is considered as a prominent solution for electric vehicle chargers and telecommunication systems integrated to the grid above 380 V line to line. However, traditional solutions for those applications employ cascaded architectures with an ac-dc boost-type...
journal article 2022
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Wu, Lizhou (author), Rao, Siddharth (author), Taouil, M. (author), Marinissen, Erik Jan (author), Kar, Gouri Sankar (author), Hamdioui, S. (author)
The popularity of perpendicular magnetic tunnel junction (pMTJ)-based spin-transfer torque magnetic random access memories (STT-MRAMs) is growing very fast. The performance of such memories is very sensitive to magnetic fields, including both internal and external ones. This article presents a magnetic-field-aware compact model of pMTJ, named...
journal article 2022
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