First demonstration of l-band high-power limiter with gan schottky barrier diodes (Sbds) based on steep-mesa technology

Gallium nitride (GaN) has attracted increased attention because of superior material properties, such as high electron saturation velocity and high electrical field strength, which are promising for high-power microwave applications. We report on a high-performance vertical GaN-based Schottky barrier diode (SBD) and its demonstration in a...

High-power and broadband microwave detection with a quasi-vertical GaN Schottky barrier diode by novel post-mesa nitridation

We report a high-performance GaN Schottky barrier diode (SBD) on a sapphire substrate with a novel post-mesa nitridation technique and its application in a high-power microwave detection circuit. The fabricated SBD achieved a very high forward current density of 9.19 kA cm-2 at 3 V, a low specific on-resistance (RON,sp) of 0.22 mO cm2 and...

Event-Triggered Adaptive Fault-Tolerant Synchronization Tracking Control for Multiple 6-DOF Fixed-Wing UAVs

In contrast with most existing results concerning unmanned aerial vehicles (UAVs) wherein two-degree or only attitude/longitudinal dynamics are considered, this article proposes an event-triggered cooperative synchronization fault-tolerant control (FTC) methodology for multiple fixed-wing UAVs whose dynamics are six-degree-of-freedom (DOF)...

A micro graphene high temperature sensor with a single Si₃N₄ protective layer

Temperature sensors are widely used in industrial production, national defense and military fields. The traditional temperature sensors normally operate in a limited temperature range no more than 200 °C, which cannot be used for extreme high temperature detections. In this paper, a thermal protection method for the sensing graphene membrane...

A Novel High-temperature Pressure Sensor Based on Graphene Coated by Si3N4

The high-temperature pressure sensors have wide applications in aerospace, petroleum, geothermal exploration, automotive electronics, and other fields. However, the traditional silicon-based pressure sensors are restricted to pressure measurement under 120~{\circ }\text{C} and cannot be satisfied to measure the pressure of various gases or...

Release of phosphorus through pretreatment of waste activated sludge differs essentially from that of carbon and nitrogen resources: Comparative analysis across four wastewater treatment facilities

The accumulation of phosphorus in activated sludge in wastewater treatment plants (WWTPs) provides potential for phosphorus recovery from sewage. This study delves into the potential for releasing phosphorus from waste activated sludge through two distinct treatment methods—thermal hydrolysis and pH adjustment. The investigation was conducted...