Single Atom Electronics

This thesis describes a series of experiments on the electronic properties of individual shallow dopant atoms in silicon. Shallow dopants are impurity atoms that bind either a single electron or hole and can therefore be con- sidered as the solid state analogue to the hydrogen atom. As the transistor density increases, critical device dimensions...

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Filiform corrosion of aluminium alloys: The effect of microstructural variations in the substrate

Theorie van de wisselstroombel