Electron beam technology for single nanometer fabrication

To follow Moore’s law and the trend of devices to keep shrinking, the nanotechnology industry is challenged in finding a suitable technique for the mass production of integrated circuits with critical dimension in the sub-10 nm range. At the time this project started, EUV lithography, that employs light with a wavelength of 13.5 nm and thus...

Nanoscale imaging of light-matter coupling inside metal-coated cavities with a pulsed electron beam

Many applications in (quantum) nanophotonics rely on controlling light-matter interaction through strong, nanoscale modification of the local density of states (LDOS). All-optical techniques probing emission dynamics in active media are commonly used to measure the LDOS and benchmark experimental performance against theoretical predictions....

Charged particle single nanometre manufacturing

Following a brief historical summary of the way in which electron beam lithography developed out of the scanning electron microscope, three state-of-the-art charged-particle beam nanopatterning technologies are considered. All three have been the subject of a recently completed European Union Project entitled "Single Nanometre Manufacturing:...

Electron transport and room temperature single-electron charging in 10 nm scale PtC nanostructures formed by electron beam induced deposition

Nanostructures of platinum-carbon nanocomposite material have been formed by electron-beam induced deposition. These consist of nanodots and nanowires with a minimum size ∼20 nm, integrated within ∼100 nm nanogap n-type silicon-on-insulator transistor structures. The nanodot transistors use ∼20 nm Pt/C nanodots, tunnel-coupled to Pt/C...

Multi-color electron microscopy by element-guided identification of cells, organelles and molecules

Cellular complexity is unraveled at nanometer resolution using electron microscopy (EM), but interpretation of macromolecular functionality is hampered by the difficulty in interpreting grey-scale images and the unidentified molecular content. We perform large-scale EM on mammalian tissue complemented with energy-dispersive X-ray analysis ...

Pattern transfer into silicon using sub-10 nm masks made by electron beam induced deposition

To demonstrate the possibility of using EBID masks for sub-10 nm pattern transfer into silicon, first experiments were carried out by using 20-40 nm EBID masks, that were etched by different chemistries. It is experimentally verified that recipes based on hydrogen bromide, chlorine and boron trichloride can selectively etch silicon when using 20...

Pattern transfer into silicon using sub-10 nm masks made by electron beam-induced deposition

To demonstrate the possibility of using electron beam-induced deposition (EBID) masks for sub-10 nm pattern transfer into silicon, first experiments were carried out by using 20- to 40-nm EBID masks, which were etched by different chemistries. It is experimentally verified that recipes based on hydrogen bromide, chlorine, and boron trichloride...