Persistent luminescence excitation spectroscopy of BaAl₂O₄:Eu²⁺,Dy³⁺

BaAl₂O₄:Eu²⁺,Dy³⁺ is related, both by structure and luminescence, to one of the best persistent luminescent phosphors, SrAl₂O₄:Eu²⁺,Dy³⁺. At room temperature (RT), the green persistent emission of BaAl₂O₄:Eu²⁺,Dy<sup>3+<...

Synthesis optimization and charge carrier transfer mechanism in LiLuSiO₄:Ce, Tm storage phosphor

LiLuSiO₄:Ce and LiLuSiO₄:Ce, Tm show very efficient charge carrier storage properties upon beta irradiation after samples have received treatment in vacuum. They outperform the commercial storage phosphor BaFBr(I):Eu²⁺ in many aspects. The influence of the synthesis conditions, Ce and Tm concentration,...

Thermal ionization and thermally activated crossover quenching processes for 5d-4f luminescence in Y3 A l5-x G ax O12: P r3+

We investigated thermally activated ionization and thermally activated crossover as the two possibilities of quenching of 5d luminescence in Pr3+-doped Y3Al5-xGaxO12. Varying the Ga content x gives the control over the relative energy level location of the 5d and 4f2:PJ3 states of Pr3+ and the host conduction band (CB). Temperature-dependent...

Charge Carrier Trapping Processes in RE2O2S (RE = La, Gd, Y, and Lu)

Two different charge carrier trapping processes have been investigated in RE2O2S:Ln3+ (RE = La, Gd, Y, and Lu; Ln = Ce, Pr, and Tb) and RE2O2S:M (M = Ti4+ and Eu3+). Cerium, praseodymium and terbium act as recombination centers and hole trapping centers while host intrinsic defects provide the electron trap. The captured electrons released from...

Electronic structure and site occupancy of lanthanide-doped (Sr, ca)₃(Y, lu)₂Ge₃O₁₂ garnets: A spectroscopic and first-principles study

Photoluminescence excitation (PLE) and emission spectra (PL) of undoped (Sr, Ca)₃(Y, Lu)₂Ge₃O₁₂ as well as Eu³⁺- and Ce³⁺-doped samples have been investigated. The PL spectra show that Eu³⁺ enters into both dodecahedral (Ca, Sr) and octahedral (Y, Lu) sites. Ce<sup>3...