Searched for: author%3A%22Gudj%C3%B3nsd%C3%B3ttir%2C+S.%22
(1 - 12 of 12)
document
Ubbink, R.F. (author), Gudjónsdóttir, S. (author), Vogel, Y.B. (author), Houtepen, A.J. (author)
Electrochemical charging of nanocrystal films opens up new possibilities for designing quantum dot-based device structures, but a solid theoretical framework of this process and its limitations is lacking. In this work, drift-diffusion simulations are employed to model the charging of nanocrystal films and gain insight into the...
journal article 2023
document
Eren, H. (author), Bednarz, Roland Jan Reiner (author), Alimoradi Jazi, M. (author), Donk, Laura (author), Gudjónsdóttir, S. (author), Bohländer, P.R. (author), Eelkema, R. (author), Houtepen, A.J. (author)
Quantum dots (QDs) are considered for devices like light-emitting diodes (LEDs) and photodetectors as a result of their tunable optoelectronic properties. To utilize the full potential of QDs for optoelectronic applications, control over the charge carrier density is vital. However, controlled electronic doping of these materials has remained...
journal article 2022
document
Gudjónsdóttir, S. (author)
Control over the charge carrier density of semiconductor materials is essential for various electronic devices. Unfortunately, common electronic doping methods have not always been successful for new generations of semiconductors, such as organic semiconductors and colloidal quantum dots. Therefore, a new doping method that offers a great...
doctoral thesis 2020
document
Gudjónsdóttir, S. (author), Houtepen, A.J. (author)
Arguably the most controllable way to control the charge density in various semiconductors, is by electrochemical doping. However, electrochemically injected charges usually disappear within minutes to hours, which is why this technique is not yet used to make semiconductor devices. In this manuscript, electrochemical doping of different...
journal article 2020
document
Geuchies, J.J. (author), Brynjarsson, Baldur (author), Grimaldi, G. (author), Gudjónsdóttir, S. (author), van der Stam, W. (author), Evers, W.H. (author), Houtepen, A.J. (author)
Solution-processed quantum dot (QD) lasers are one of the holy grails of nanoscience. They are not yet commercialized because the lasing threshold is too high: one needs >1 exciton per QD, which is difficult to achieve because of fast nonradiative Auger recombination. The threshold can, however, be reduced by electronic doping of the QDs,...
journal article 2020
document
Gudjónsdóttir, S. (author), Houtepen, A.J. (author), Koopman, Christel (author)
Electronic doping of semiconductor nanomaterials can be efficiently achieved using electrochemistry. However, the injected charge carriers are usually not very stable. After disconnecting the cell that is used for electrochemical doping the carrier density drops, typically in several minutes. While there are multiple possible causes for this, we...
journal article 2019
document
van der Stam, W. (author), Grimaldi, G. (author), Geuchies, J.J. (author), Gudjónsdóttir, S. (author), Van Uffelen, Pieter T. (author), Van Overeem, Mandy (author), Brynjarsson, Baldur (author), Kirkwood, N.R.M. (author), Houtepen, A.J. (author)
In this work, we systematically study the spectroelectrochemical response of CdSe quantum dots (QDs), CdSe/CdS core/shell QDs with varying CdS shell thicknesses, and CdSe/CdS/ZnS core/shell/shell QDs in order to elucidate the influence of localized surface trap states on the optoelectronic properties. By correlating the differential...
journal article 2019
document
Grimaldi, G. (author), Van Den Brom, Mark J. (author), du Fossé, I. (author), Crisp, R.W. (author), Kirkwood, N.R.M. (author), Gudjónsdóttir, S. (author), Geuchies, J.J. (author), Kinge, S.S. (author), Siebbeles, L.D.A. (author), Houtepen, A.J. (author)
Colloidal quantum dots (QDs) allow great flexibility in the design of optoelectronic devices, thanks to their size-dependent optical and electronic properties and the possibility to fabricate thin films with solution-based processing. In particular, in QD-based heterojunctions, the band gap of both components can be controlled by varying the...
journal article 2019
document
Gudjónsdóttir, S. (author), van der Stam, W. (author), Koopman, Christel (author), Kwakkenbos, Bob (author), Evers, W.H. (author), Houtepen, A.J. (author)
Semiconductor films that allow facile ion transport can be electronically doped via electrochemistry, where the amount of injected charge can be controlled by the potential applied. To apply electrochemical doping to the design of semiconductor devices, the injected charge has to be stabilized to avoid unintentional relaxation back to the...
journal article 2019
document
Gudjónsdóttir, S. (author), van der Stam, W. (author), Kirkwood, Nicholas (author), Evers, W.H. (author), Houtepen, A.J. (author)
Control over the charge density is very important for implementation of colloidal semiconductor nanocrystals into various optoelectronic applications. A promising approach to dope nanocrystal assemblies is charge injection by electrochemistry, in which the charge compensating electrolyte ions can be regarded as external dopant ions. To gain...
journal article 2018
document
van der Stam, W. (author), de Graaf, M. (author), Gudjónsdóttir, S. (author), Geuchies, J.J. (author), Dijkema, J.J. (author), Kirkwood, N.R.M. (author), Evers, W.H. (author), Longo, Alessandro (author), Houtepen, A.J. (author)
The processes that govern radiative recombination in ternary CuInS<sub>2</sub> (CIS) nanocrystals (NCs) have been heavily debated, but recently, several research groups have come to the same conclusion that a photoexcited electron recombines with a localized hole on a Cu-related trap state. Furthermore, it has been observed that single CIS...
journal article 2018
document
van der Stam, W. (author), Gudjónsdóttir, S. (author), Evers, W.H. (author), Houtepen, A.J. (author)
Control over the doping density in copper sulfide nanocrystals is of great importance and determines its use in optoelectronic applications such as NIR optical switches and photovoltaic devices. Here, we demonstrate that we can reversibly control the hole carrier density (varying from &gt;10<sup>22</sup> cm<sup>-3</sup> to intrinsic) in...
journal article 2017
Searched for: author%3A%22Gudj%C3%B3nsd%C3%B3ttir%2C+S.%22
(1 - 12 of 12)