Electrical control of the g tensor of the first hole in a silicon MOS quantum dot

Single holes confined in semiconductor quantum dots are a promising platform for spin-qubit technology, due to the electrical tunability of the g factor of holes. However, the underlying mechanisms that enable electric spin control remain unclear due to the complexity of hole-spin states. Here, we study the underlying hole-spin physics of the...

Spin and orbital structure of the first six holes in a silicon metal-oxide-semiconductor quantum dot

Valence band holes confined in silicon quantum dots are attracting significant attention for use as spin qubits. However, experimental studies of single-hole spins have been hindered by challenges in fabrication and stability of devices capable of confining a single hole. To fully utilize hole spins as qubits, it is crucial to have a detailed...

Coherent control via weak measurements in P 31 single-atom electron and nuclear spin qubits

The understanding of weak measurements and interaction-free measurements has greatly expanded the conceptual and experimental toolbox to explore the quantum world. Here we demonstrate single-shot variable-strength weak measurements of the electron and nuclear spin states of a P31 single-atom donor in silicon. We first show how the partial...

Integrated silicon qubit platform with single-spin addressability, exchange control and single-shot singlet-triplet readout

Silicon quantum dot spin qubits provide a promising platform for large-scale quantum computation because of their compatibility with conventional CMOS manufacturing and the long coherence times accessible using 28Si enriched material. A scalable error-corrected quantum processor, however, will require control of many qubits in parallel, while...

Impact of g -factors and valleys on spin qubits in a silicon double quantum dot

We define single electron spin qubits in a silicon metal-oxide-semiconductor double quantum dot system. By mapping the qubit resonance frequency as a function of a gate-induced electric field, the spectrum reveals an anticrossing that is consistent with an intervalley spin-orbit coupling. We fit the data from which we extract an intervalley...