Silicon doping techniques using chemical vapor dopant deposition

Ultrashallow junctions are essential for the achievement of superior transistor performance, both in MOSFET and bipolar transistors. The stringent demands require state-of-the-art fabrication techniques. At the same time, in a different context, the accurate fabrication of various n type doping profiles by low-temperature Si epitaxy is a...

Improved RF Devices for Future Adaptive Wireless Systems Using Two-Sided Contacting and A1N Cooling

This paper reviews special RF/microwave silicon device implementations in a process that allows two-sided contacting of the devices: the back-wafer contacted silicon-on-glass (SOG) substrate-transfer technology (STT) developed at DIMES. In this technology, metal transmission lines can be placed on the low-loss glass substrate, while the...

Controlled Growth of Non-Uniform Arsenic Profiles in Silicon Reduced-Pressure Chemical Vapor Deposition Epitaxial Layers

An empirical model of As surface segregation during reduced-pressure chemical vapor deposition Si epitaxy is presented. This segregation mechanism determines the resulting doping profile in the grown layer and is here described by a model of simultaneous and independent As adsorption and segregation versus incorporation. The model quantifies...

Analytical model of I–V characteristics of arbitrarily shallow p-n junctions

For the first time, an analytical model of arbitrarily shallow p-n junctions is presented. Depending on the junction depth, electrical characteristics of ultrashallow p-n junctions can vary from the characteristics of standard Schottky diodes to standard deep p-n junctions. This model successfully unifies the standard Schottky and p-n diode...

A 67 dBm OIP3 Multistacked Junction Varactor

Enabling Low-Distortion Varactors for Adaptive Transmitters

Versatile N-Type Profile Engineering by Controlling Arsenic Surface Segregation in Silicon RPCVD

With the purpose of controlling the incorporation of arsenic during RPCVD Si epitaxy, the surface segregation of As during lowtemperature epi growth was investigated. Parameters such as the Si growth rate, As deposition rate and As incorporation rate, which in previous models were either not evaluated or assumed to be constant, were found here...