Searched for: author%3A%22Stehouwer%2C+L.E.A.%22
(1 - 5 of 5)
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Degli Esposti, D. (author), Stehouwer, L.E.A. (author), Gül, Önder (author), Samkharadze, Nodar (author), Déprez, C.C. (author), Meyer, M. (author), Meijer, Ilja N. (author), Tryputen, L. (author), Karwal, S. (author), Vandersypen, L.M.K. (author), Sammak, A. (author), Veldhorst, M. (author), Scappucci, G. (author)
The electrical characterisation of classical and quantum devices is a critical step in the development cycle of heterogeneous material stacks for semiconductor spin qubits. In the case of silicon, properties such as disorder and energy separation of conduction band valleys are commonly investigated individually upon modifications in selected...
journal article 2024
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Tidjani, H. (author), Tosato, A. (author), Ivlev, A.S. (author), Déprez, C.C. (author), Oosterhout, S.D. (author), Stehouwer, L.E.A. (author), Sammak, A. (author), Scappucci, G. (author), Veldhorst, M. (author)
Gate-defined quantum dots in silicon-germanium heterostructures have become a compelling platform for quantum computation and simulation. Thus far, developments have been limited to quantum dots defined in a single plane. Here, we propose to advance beyond planar systems by exploiting heterostructures with multiple quantum wells. We...
journal article 2023
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Stehouwer, L.E.A. (author), Tosato, A. (author), Degli Esposti, D. (author), Costa, D.C. (author), Veldhorst, M. (author), Sammak, A. (author), Scappucci, G. (author)
We grow strained Ge/SiGe heterostructures by reduced-pressure chemical vapor deposition on 100 mm Ge wafers. The use of Ge wafers as substrates for epitaxy enables high-quality Ge-rich SiGe strain-relaxed buffers with a threading dislocation density of ( 6 ± 1 ) × 10 5 cm − 2 , nearly an order of magnitude improvement compared to control...
journal article 2023
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Koelling, Sebastian (author), Stehouwer, L.E.A. (author), Paquelet Wuetz, B. (author), Scappucci, G. (author), Moutanabbir, Oussama (author)
Atom probes generate three-dimensional atomic-scale tomographies of material volumes corresponding to the size of modern-day solid-state devices. Here, the capabilities of atom probe tomography are evaluated to analyze buried interfaces in semiconductor heterostructures relevant for electronic and quantum devices. Employing brute-force search...
journal article 2022
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Paquelet Wuetz, B. (author), Stehouwer, L.E.A. (author), Zwerver, A.M.J. (author), Philips, S.G.J. (author), Xue, X. (author), Zheng, G. (author), Lodari, M. (author), Samkharadze, Nodar (author), Sammak, A. (author), Vandersypen, L.M.K. (author), Scappucci, G. (author)
Electron spins in Si/SiGe quantum wells suffer from nearly degenerate conduction band valleys, which compete with the spin degree of freedom in the formation of qubits. Despite attempts to enhance the valley energy splitting deterministically, by engineering a sharp interface, valley splitting fluctuations remain a serious problem for qubit...
journal article 2022
Searched for: author%3A%22Stehouwer%2C+L.E.A.%22
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