Avalanche-mode Si light-emitting transistor for narrow-band emission near 760 nm

We report an avalanche-mode light-emitting transistor (AMLET) in silicon (Si), based on a lateral bipolar junction, which emits light near 760 nm optical wavelength with a record low bandwidth of 38 nm. The AMLET, designed in a CMOS-compatible silicon-on-insulator (SOI) photonics platform, is optically confined within a 0.21 ∼\μ m thick SOI...