- document
-
Yuan, S. (author), Zhang, Z. (author), Fieback, M. (author), Xun, H. (author), Marinissen, E. J. (author), Kar, G. S. (author), Rao, S. (author), Couet, S. (author), Taouil, M. (author), Hamdioui, S. (author)The development of Spin-Transfer Torque Magnetic RAMs (STT-MRAMs) mass production requires high-quality test solutions. Accurate and appropriate fault modeling is crucial for the realization of such solutions. This paper targets fault modeling and test generation for all interconnect and contact defects in STT-MRAMs and shows that using the...conference paper 2023
- document
-
Yuan, S. (author), Taouil, M. (author), Fieback, M. (author), Xun, H. (author), Marinissen, Erik Jan (author), Kar, Gouri Sankar (author), Rao, Sidharth (author), Couet, Sebastien (author), Hamdioui, S. (author)The development of Spin-transfer torque magnetic RAM (STT-MRAM) mass production requires high-quality dedicated test solutions, for which understanding and modeling of manufacturing defects of the magnetic tunnel junction (MTJ) is crucial. This paper introduces and characterizes a new defect called Back-Hopping (BH); it also provides its...conference paper 2023
- document
-
Aouichi, A. (author), Yuan, S. (author), Fieback, M. (author), Rao, Siddharth (author), Kim, Woojin (author), Marinissen, Erik Jan (author), Couet, Sebastien (author), Taouil, M. (author), Hamdioui, S. (author)Spin-Transfer Torque Magnetic RAMs (STT-MRAMs) are on their way to commercialization. However, obtaining high-quality test and diagnosis solutions for STT-MRAMs is challenging due to the existence of unique defects in Magnetic Tunneling Junctions (MTJs). Recently, the Device-Aware Test (DA-Test) method has been put forward as an effective...conference paper 2023