Strategy to mitigate the dipole interfacial states in (i)a-Si:H/MoOxpassivating contacts solar cells

Electrical simulations show that the dipole formed at (i)a-Si:H/MoOx interface can explain electrical performance degradation. We experimentally manipulate this interface by a plasma treatment (PT) to mitigate the dipole strength without harming the optical response. The optimal PT + MoOx stack results in strongly improved electrical...

Strategy to mitigate the dipole interfacial states in (i)a-Si:H/MoO_x passivating contacts solar cells

Molybdenum oxide (MoO_x) is attractive for applications as hole-selective contact in silicon heterojunction solar cells for its transparency and relatively high work function. However, the integration of MoO_x stacked on intrinsic amorphous silicon (i)a-Si:H layer usually exhibits some issues that are still not fully...