Correction: Study on the controllability of the fabrication of single-crystal silicon nanopores/nanoslits with a fast-stop ionic current-monitored TSWE method (Microsystems & Nanoengineering, (2023), 9, 1, (63), 10.1038/s41378-023-00532-0)

Correction to: Microsystems & Nanoengineering published online 16 May 2023 Correction Following publication of the original article¹, it was noticed that the phrase ‘DNA sequencing’ is incorrect, which should be replaced by ‘biosensing’. The original paper has been updated.

Study on the controllability of the fabrication of single-crystal silicon nanopores/nanoslits with a fast-stop ionic current-monitored TSWE method

The application of single-crystal silicon (SCS) nanopore structures in single-molecule-based analytical devices is an emerging approach for the separation and analysis of nanoparticles. The key challenge is to fabricate individual SCS nanopores with precise sizes in a controllable and reproducible way. This paper introduces a fast-stop ionic...

Enhanced Sensitivity Pt/AlGaN/GaN Heterostructure NO Sensor Using a Two-Step Gate Recess Technique

Based on our proposed precision two-step gate recess technique, a suspended gate-recessed Pt/AlGaN/GaN heterostructure gas sensor integrated with a micro-heater is fabricated and characterized. The controllable two-step gate recess etching method, which includes O2 plasma oxidation of nitride and wet etching, improves gas sensing performance....

Fabrication of Nanoslits with <111> Etching TSWE Method

In this paper, we report a modified three step anisotropic wet etching (TSWE) method to fabricate solid-state silicon nanoslits. The slit-opening process is performed by &lt;111&gt; crystal plane etching. The etching rate of the &lt;111&gt; crystal plane is reasonably slow as it is only 1/45 of the &lt;100&gt; etching rate, thus allowing and...

A high responsivity and controllable recovery ultraviolet detector based on a WO₃gate AlGaN/GaN heterostructure with an integrated micro-heater

A high responsivity and controllable recovery ultraviolet (UV) photodetector based on a tungsten oxide (WO₃) gate AlGaN/GaN heterostructure with an integrated micro-heater is reported for the first time. The WO₃nanolayer was deposited by physical vapor deposition (PVD) for deep UV absorption and the micro-heater was...

Low power AlGaN/GaN MEMS pressure sensor for high vacuum application

A micro-scale pressure sensor based on suspended AlGaN/GaN heterostructure is reported with non-linear sensitivity. By sealing the cavity, vacuum sensing at various temperatures was demonstrated. To validate the proposed concept of the AlGaN/GaN vacuum sensor, a 700 µm diameter circular membrane was electrically characterized under applied...

Suspended AlGaN/GaN HEMT NO₂ Gas Sensor Integrated with Micro-heater

We developed an AlGaN/GaN high electron mobility transistor (HEMT) sensor with a tungsten trioxide (WO₃) nano-film modified gate for nitrogen dioxide (NO₂) detection. The device has a suspended circular membrane structure and an integrated micro-heater. The thermal characteristic of the Platinum (Pt) micro-heater and the...

Suppression of persistent photoconductivity AlGaN/GaN heterostructure photodetectors using pulsed heating

This paper demonstrates a method to reduce the decay time in AlGaN/GaN photodetectors by a pulsed heating mode. A suspended AlGaN/GaN heterostructure photodetector integrated with a micro-heater is fabricated and characterized under ultraviolet illumination. We have observed that the course of persistent photoconductivity was effectively...

Suspended tungsten trioxide (WO₃) gate AlGaN/GaN heterostructure deep ultraviolet detectors with integrated micro-heater

A suspended WO₃-gate AlGaN/GaN heterostructure photodetector integrated with a micro-heater is micro-fabricated and characterized for ultraviolet photo detection. The transient optical characteristics of the photodetector at different temperatures are studied. The 2DEG-based photodetector shows a recovery (170 s) time under 240 nm...

Characterization of an Acetone Detector based on a Suspended WO3-Gate AlGaN/GaN HEMT Integrated with Micro-heater

A suspended AlGaN/GaN high electron mobility transistor (HEMT) sensor with a tungsten trioxide (WO 3 ) nanofilm modified gate was microfabricated and characterized for ppm-level acetone gas detection. The sensor featured a suspended circular membrane structure and an integrated microheater to select the optimum working temperature. High working...

A silicon MEMS structure for characterization of femto-farad-level capacitive sensors with lock-in architecture

This paper presents a silicon MEMS capacitive structure to investigate a test methodology for fF-level capacitive sensors’ measurement. The device mimics a capacitive sensor with a changing intermediate layer between the electrodes. A single mask bulk micromachining process is used to fabricate the device, which has a nominal capacitance of 1.2...