Zhang, Jingping (author), Luo, Houcai (author), Wu, Huan (author), Wang, Zeping (author), Zheng, Bofeng (author), Zhang, Kouchi (author), Chen, Xianping (author) A novel 4H-SiC Multiple Stepped SGT MOSFET (MSGT-MOSFET) is presented and investigated utilizing TCAD simulations in this paper. We have quantitatively studied the characteristics of the device through simulation modeling and physical model calculations, and comparatively analyzed the performance and application prospects of this novel device...
journal article 2023
