Silicon-Based Integration of Groups III, IV, V Chemical Vapor Depositions in High-Quality Photodiodes

Heterogeneous integration of III-V semiconductors with silicon (Si) technology is an interesting approach to utilize the advantages of both high-speed photonic and electronic properties. The work presented in this thesis is initiated by this major goal of merging III-V semiconductor technology with Si technology. The focus was primitively placed...

Advanced Breakdown Modeling for Solid-State Circuit Design

Modeling of the effects occurring outside the usual region of application of semiconductor devices is becoming more important with increasing demands set upon electronic systems for simultaneous speed and output power. Analog integrated circuit designers are forced to enter regimes of transistor operation that are close to or within the device...