Compact Modeling of Physical Mechanisms Present in the Weak Breakdown Regime of Advanced Si and SiGe Bipolar Transistors

With the current increasing demand for faster and more reliable communication and computing electronic devices such as faster wireless communication networks, circuit designers are forced to carry out device optimization in order to achieve the maximum possible performance. To enable full circuit optimization, designers depend on compact models...

High-frequency noise modeling of Si(Ge) bipolar transistors

The design and the optimization of electronic systems often requires a detailed knowledge of the inherent noise generated within semiconductor active devices, constituting the core of such systems. Examples of applications in which noise is a key issue include receiver front-ends in radiofrequency (RF) and optoelectronic transmission systems,...