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Loef, R. (author), Schoonman, J. (author), Goossens, A. (author)Type transformation in CuInSe2 and CuInS2 solar cells is an important issue with far reaching consequences. In the present study, the presence of a p-n homojunction inside CuInS2 in a TiO2/CuInS2 device is revealed with a detailed impedance spectroscopy and capacitance study. A n-type CuInS2 film with a thickness of 40?nm is found at the TiO2 (n...journal article 2007
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Savenije, T.J. (author), Nanu, M. (author), Schoonman, J. (author), Goossens, A. (author)Photoinduced interfacial charge carrier generation, separation, trapping, and recombination in TiO2?In2S3?CuInS2 cells have been studied with time-resolved microwave conductivity (TRMC). Single layer, double layer, and complete triple layer configurations have been studied. Selective electronic excitation in one of the components is accomplished...journal article 2007
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Nanu, M. (author), Boulch, F. (author), Schoonman, J. (author), Goossens, A. (author)Deep-level transient spectroscopy (DLTS) has been used to measure the concentration and energy position of deep electronic states in CuInS2. Flat TiO2?CuInS2 heterojunctions as well as TiO2-CuInS2 nanocomposites have been investigated. Subband-gap electronic states in CuInS2 films are mostly due to antisite point defects and vacancies....journal article 2005
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Van der Zanden, B. (author), Van de Krol, R. (author), Schoonman, J. (author), Goossens, A. (author)The photoluminescence (PL) of poly(3-octyl-thiophene) (P3OT) thin films applied on TiO2 substrates is compared to the PL of P3OT films applied on quartz. Quenching of excitons occurs at the P3OT/TiO2 interface and not at the P3OT/quartz interface. Yet, in the former case the PL intensity is stronger than in the latter. In particular, P3OT films...journal article 2004