Lanthanide 4f-level location in lanthanide doped and cerium-lanthanide codoped NaLaF4 by photo- and thermoluminescence

Photo- and thermoluminescence (TL) spectra of NaLaF4:Ln3+ (Ln = Ce,Pr,Nd,Sm,Eu,Gd,Tb,Dy,Ho,Er,Tm) and NaLaF4:Ce3+, Ln3+ (Ln = Nd,Sm,Ho,Er,Tm) are presented and used together with the empirical Dorenbos model in order to establish the 4f energy level positions of all tri- and divalent lanthanide ions doped in NaLaF4. The information will be...

Location of lanthanide impurity levels in the III-V semiconductor GaN

Knowledge from lanthanide spectroscopy on wide band gap (6–10?eV) inorganic compounds is used to understand and predict optical and electronic properties of the lanthanides in the III-V semiconductor GaN. For the first time the location of the 4fn ground state energy of each divalent and trivalent lanthanide ion relative to the valence and...