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Passivation Enhancement of Poly-Si Carrier-Selective Contacts by Applying ALD Al_2O_3 Capping LayersYang, G. (author), Van de Loo, Bas (author), Stodolny, Maciej (author), Limodio, G. (author), Melskens, Jimmy (author), Isabella, O. (author), Weeber, A.W. (author), Zeman, M. (author), Kessels, W. M.M. (author)Hydrogenation of polycrystalline silicon (poly-Si) passivating contacts is crucial for maximizing their passivation performance. This work presents the application of Al2O3 prepared by atomic layer deposition as a hydrogenating capping layer. Several important questions related to this application of Al2O3 are addressed by comparing results...journal article 2021
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Stodolny, Maciej K. (author), Anker, John (author), Geerligs, Bart L.J. (author), Janssen, G.J.M. (author), Van De Loo, Bas W.H. (author), Melskens, J. (author), Santbergen, R. (author), Isabella, O. (author), Schmitz, Jurriaan (author), Lenes, Martijn (author), Luchies, Jan Marc (author), Kessels, Wilhelmus M.M. (author), Romijn, I.G. (author)We present a detailed material study of n<sup>+</sup>-type polysilicon (polySi) and its application as a carrier selective rear contact in a bifacial n-type solar cell comprising fire-through screen-printed metallization and 6" Cz wafers. The cells were manufactured with low-cost industrial process steps yielding V<sub>oc</sub>s from 676 to...journal article 2017