A Hybrid Readout Solution for GaN-Based Detectors Using CMOS Technology

Gallium nitride (GaN) and its alloys are becoming preferred materials for ultraviolet (UV) detectors due to their wide bandgap and tailorable out-of-band cutoff from 3.4 eV to 6.2 eV. GaN based avalanche photodiodes (APDs) are particularly suitable for their high photon sensitivity and quantum efficiency in the UV region and for their...

High-Performance Back-Illuminated Three-Dimensional Stacked Single-Photon Avalanche Diode Implemented in 45-nm CMOS Technology

We present a high-performance back-illuminated three-dimensional stacked single-photon avalanche diode (SPAD), which is implemented in 45-nm CMOS technology for the first time. The SPAD is based on a P⁺/Deep N-well junction with a circular shape, for which N-well is intentionally excluded to achieve a wide depletion region, thus...