EUV mask feature reconstruction via phase retrieval

EUV lithography is the main candidate for patterning of future technology nodes. Its successful implementation depends on many aspects, among which the availability of actinic mask metrology tools able to inspect the patterned absorber in order to control and monitor the lithographic process. In this work, we perform a simulation study to...

Wavefront measurement for EUV lithography system through Hartmann sensor

Accurate wavefront aberration measurement are essential for next-generation Extreme Ultraviolet (EUV) Lithography. During the past years several accurate interferometric techniques have been developed, but these techniques have limitation. In this work we discuss a different technique based on the Hartmann Wavefront Sensor that requires no...